Magnetic Characterization of Molecular Beam Epitaxy Grown Cd1xMnxTe Structures
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Ferromagnetism of Mn/Ge Multilayers Grown by Molecular Beam Epitaxy
We report on novel ferromagnetic Mn/Ge multilayers for spintronics applications investigated both experimentally and theoretically. Two Mn/Ge multilayers are grown on GaAs (001) substrates by molecular beam epitaxy. The period of each multilayer consists of an Mn layer of varying thickness (0.6 and 5 Å) and a 10 Å thick Ge spacer layer. From temperaturedependent magnetization and hysteresis loo...
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Additional resources and features associated with this article are available within the HTML version: • Supporting Information • Access to high resolution figures • Links to articles and content related to this article • Copyright permission to reproduce figures and/or text from this article Supported vanadium oxides processed under ambient environments have been studied by using X-ray standing...
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The surface structures and growth kinetics of InGaN(0001) are studied. It is well known that during molecular beam epitaxy GaN surfaces undergo a smooth to rough transition when the growth condition is switched from Ga-rich to N-rich. It is found here that indium atoms have only small effect on this transition when deposited on GaN(000 ), but when deposited on GaN(0001) the indium acts as a sur...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 1995
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.87.169